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Tuning the morphologies of SiC nanowires via the change of the CoxSiy melts

J J Chen Y Pan W H Tang Q Shi

纳微快报（英文）2010，Vol.2Issue(1)：11-17,7.

纳微快报（英文）2010，Vol.2Issue(1)：11-17,7.DOI:10.5101/nml.v2i1.p11-17

Tuning the morphologies of SiC nanowires via the change of the CoxSiy melts

J J Chen ¹Y Pan ²W H Tang ¹Q Shi³

作者信息

1. Department of Physics, Center for 0ptoelectronics Materials and Devices, Zhejiang Sci-Tech University, Hangzhou, 310018, China
2. Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
3. Key Laboratory of Advanced Textile Materials and Manufacturing Technology Zhejiang Sci-Tech University, Ministry of education, Hangzhou 310018, China
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摘要

关键词

Silicon carbide/Nanowires/Morphology

Key words

Silicon carbide/Nanowires/Morphology

引用本文复制引用

J J Chen,Y Pan,W H Tang,Q Shi..Tuning the morphologies of SiC nanowires via the change of the CoxSiy melts[J].纳微快报（英文）,2010,2(1):11-17,7.

基金项目

This work is supported by the National Nature Science Foundation of the People’s Republic of China (Grant no.50902124) and the National Basic Research Program of China (973 Program)(Grant no.2010CB933501). The authors also gratefully acknowledge the financial support from the Zhejiang Provincial Natural Science Foundation (Grant no. Y4090468) and Science and Technology Department of Zhejiang Province (Grant no.2009F70046) （Grant no.50902124）

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