首页|期刊导航|纳微快报(英文)|E ective Doping of Rare-earth Ionsin Silica Gel:A Novel Approach to Design Active Electronic Devices

E ective Doping of Rare-earth Ionsin Silica Gel:A Novel Approach to Design Active Electronic DevicesOAEISCI

E ective Doping of Rare-earth Ionsin Silica Gel:A Novel Approach to Design Active Electronic Devices

D. Haranath∗;Savvi Mishra;Amish G. Joshi;Sonal Sahai;Virendra Shanker

National Physical Laboratory, Council of Scientific and Industrial Research, Dr K S Krishnan Road, New Delhi, 110 012, IndiaNational Physical Laboratory, Council of Scientific and Industrial Research, Dr K S Krishnan Road, New Delhi, 110 012, IndiaNational Physical Laboratory, Council of Scientific and Industrial Research, Dr K S Krishnan Road, New Delhi, 110 012, IndiaNational Physical Laboratory, Council of Scientific and Industrial Research, Dr K S Krishnan Road, New Delhi, 110 012, IndiaNational Physical Laboratory, Council of Scientific and Industrial Research, Dr K S Krishnan Road, New Delhi, 110 012, India

LuminescenceNanophosphorShort-range orderElectron microscopy

LuminescenceNanophosphorShort-range orderElectron microscopy

《纳微快报(英文)》 2011 (3)

141-145,5

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