半导体学报（英文版）2016，Vol.37Issue(6)：39-51,13.DOI:10.1088/1674-4926/37/6/064001
Comparison between Pt/TiO2/Pt and Pt/TaOX/TaOY/Pt based bipolar resistive switching devices
Comparison between Pt/TiO2/Pt and Pt/TaOX/TaOY/Pt based bipolar resistive switching devices
Patrick W.C.Ho 1Firas Odai Hatem 1Haider Abbas F.Almurib 1T.Nandha Kumar1
作者信息
- 1. Department of Electrical and Electronic Engineering, University of Nottingham Malaysia Campus, Jalan Broga,43500 Semenyih, Malaysia
- 折叠
摘要
关键词
resistive switching devices/TiO2 devices/TaO2 devices/non-volatile memory devicesKey words
resistive switching devices/TiO2 devices/TaO2 devices/non-volatile memory devices引用本文复制引用
Patrick W.C.Ho,Firas Odai Hatem,Haider Abbas F.Almurib,T.Nandha Kumar..Comparison between Pt/TiO2/Pt and Pt/TaOX/TaOY/Pt based bipolar resistive switching devices[J].半导体学报（英文版）,2016,37(6):39-51,13.
