半导体学报（英文版）2016，Vol.37Issue(6)：52-59,8.DOI:10.1088/1674-4926/37/6/064002
Large signal and noise properties of heterojunction AlxGa1-xAs/GaAs DDR IMPATTs
Large signal and noise properties of heterojunction AlxGa1-xAs/GaAs DDR IMPATTs
Suranjana Banerjee 1Monojit Mitra1
作者信息
- 1. Indian Institute of Engineering Science and Technology, Shibpur, WB 711113, India
- 折叠
摘要
关键词
heterojunction/AlxGa1-xAs/GaAs/mole fraction/DDR/IMPATTSKey words
heterojunction/AlxGa1-xAs/GaAs/mole fraction/DDR/IMPATTS引用本文复制引用
Suranjana Banerjee,Monojit Mitra..Large signal and noise properties of heterojunction AlxGa1-xAs/GaAs DDR IMPATTs[J].半导体学报（英文版）,2016,37(6):52-59,8.
