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Load-pull measurement analysis of AlGaN/GaN HEMT taking into account number of gate fingers

Pongthavornkamol Tiwat Liu Guoguo Yuan Tingting Zheng Yingkui Liu Xinyu

半导体学报（英文版）2016，Vol.37Issue(6)：87-91,5.
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半导体学报（英文版）2016，Vol.37Issue(6)：87-91,5.DOI:10.1088/1674-4926/37/6/064008

Load-pull measurement analysis of AlGaN/GaN HEMT taking into account number of gate fingers

Load-pull measurement analysis of AlGaN/GaN HEMT taking into account number of gate fingers

Pongthavornkamol Tiwat 1Liu Guoguo 1Yuan Tingting 1Zheng Yingkui 1Liu Xinyu1

作者信息

  • 1. Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • 折叠

摘要

关键词

AlGaN/GaN HEMT/gate fingers/small-signal model/load-pull measurement

Key words

AlGaN/GaN HEMT/gate fingers/small-signal model/load-pull measurement

引用本文复制引用

Pongthavornkamol Tiwat,Liu Guoguo,Yuan Tingting,Zheng Yingkui,Liu Xinyu..Load-pull measurement analysis of AlGaN/GaN HEMT taking into account number of gate fingers[J].半导体学报（英文版）,2016,37(6):87-91,5.

基金项目

Project supported by the National Natural Science Foundation of China (No.61204086). （No.61204086）

半导体学报（英文版）

OACSCDCSTPCDEI

1674-4926

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