半导体学报（英文版）2016，Vol.37Issue(6)：101-105,5.DOI:10.1088/1674-4926/37/6/064011
The investigation of the zero temperature coefficient point of power MOSFET
The investigation of the zero temperature coefficient point of power MOSFET
Zhang Bowen 1Zhang Xiaoling 1Xiong Wenwen 1She Shuojie 1Xie Xuesong1
作者信息
- 1. College of Electronic Information & Control Engineering, Beijing University of Technology, Beijing 100124, China
- 折叠
摘要
关键词
power MOSFET/ZTC/threshold voltage/mobilityKey words
power MOSFET/ZTC/threshold voltage/mobility引用本文复制引用
Zhang Bowen,Zhang Xiaoling,Xiong Wenwen,She Shuojie,Xie Xuesong..The investigation of the zero temperature coefficient point of power MOSFET[J].半导体学报（英文版）,2016,37(6):101-105,5.
