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Low-frequency noise characteristics in the MOSFETs processed in 65 nm technologyOACSCDCSTPCDEI

Low-frequency noise characteristics in the MOSFETs processed in 65 nm technology

Liu Yuan;Liu Yurong;He Yujuan;Li Bin;En Yunfei;Fang Wenxiao

Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, CEPREI,Guangzhou 510610, ChinaSchool of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, ChinaScience and Technology on Reliability Physics and Application of Electronic Component Laboratory, CEPREI,Guangzhou 510610, ChinaSchool of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, ChinaScience and Technology on Reliability Physics and Application of Electronic Component Laboratory, CEPREI,Guangzhou 510610, ChinaScience and Technology on Reliability Physics and Application of Electronic Component Laboratory, CEPREI,Guangzhou 510610, China

MOSFETlow-frequency noisecarrier number fluctuationcarrier mobility fluctuation

MOSFETlow-frequency noisecarrier number fluctuationcarrier mobility fluctuation

《半导体学报(英文版)》 2016 (6)

铟锌氧化物薄膜晶体管的低频噪声特性及其可靠性应用

106-111,6

Project supported by the National Natural Science Foundation of China (Nos.61574048,61204112) and the Guangdong Natural Science Foundation (No.2014A030313656).

10.1088/1674-4926/37/6/064012

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