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Total dose responses and reliability issues of 65 nm NMOSFETs

Yu Dezhao Zheng Qiwen Cui Jiangwei Zhou Hang Yu Xuefeng Guo Qi

半导体学报（英文版）2016，Vol.37Issue(6)：129-135,7.

半导体学报（英文版）2016，Vol.37Issue(6)：129-135,7.DOI:10.1088/1674-4926/37/6/064016

Total dose responses and reliability issues of 65 nm NMOSFETs

Yu Dezhao ¹Zheng Qiwen ²Cui Jiangwei ³Zhou Hang ¹Yu Xuefeng ²Guo Qi¹

作者信息

1. Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China
2. Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China
3. University of Chinese Academy of Sciences, Beijing 100049, China
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摘要

关键词

total dose responses/reliability/lifetime

Key words

total dose responses/reliability/lifetime

引用本文复制引用

Yu Dezhao,Zheng Qiwen,Cui Jiangwei,Zhou Hang,Yu Xuefeng,Guo Qi..Total dose responses and reliability issues of 65 nm NMOSFETs[J].半导体学报（英文版）,2016,37(6):129-135,7.

基金项目

Project supported by "Light of West China" Program of CAS (No.XBBS201219). （No.XBBS201219）

半导体学报（英文版）

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ISSN：1674-4926

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