电源学报2016，Vol.14Issue(4)：14-20,7.DOI:10.13234/j.issn.2095-2805.2016.4.14
选择区域外延槽栅结构GaN常关型MOSFET的研究
Research on GaN Based Trench Gate Normally-off MOSFET Using Selective Area Growth Technique
摘要
Abstract
The realization of high performance GaN normally-off power switching device is a hotspot in present study. Trench gate MOSFET is attractive for its large gate voltage swing and low gate leakage current. The trench gate structure is commonly formed by etch method which will introduce defect at metal-oxide-semiconductor (MOS)channel. First, the selective area growth (SAG)technique is proposed to realize trench gate normally-off MOSFET for the purpose of avoiding defect at gate channel in this paper. Then through the improvement of SAG technique including separating the SAG interface and hetero-interface and suppressing the background doping, high quality AlGaN/GaN heterostructure is regrown. The research result shows that SAG technique can retain the smooth surface in gate channel leading to supe-rior threshold voltage stability which demonstrates SAG technique as the promising way for fabricating high performance trench gate normally-off MOSFET.关键词
AlGaN/GaN异质结构/常关型/MOSFET/选择区域外延/阈值电压稳定性Key words
AlGaN/GaN heterostructure/normally-off/MOSFET/selective area growth/threshold voltage stability分类
数理科学引用本文复制引用
杨帆,何亮,郑越,沈震,刘扬..选择区域外延槽栅结构GaN常关型MOSFET的研究[J].电源学报,2016,14(4):14-20,7.基金项目
国家自然科学基金资助项目（51177175,61274039,61574173）；国家高技术研究发展计划资助项目（863计划）（2014AA032606）；广东省科技计划资助项目（2014B050505009,2015B010132007）；广东省自然科学基金资助项目（2015A030312011）；广州市科技计划资助项目（201508010048）；集成光电子学国家重点联合实验室开放课题资助项目（IOSKL2014KF17）。Project Supported by the National Natural Science Foundation of China （）
the National High-tech R&D Program of China （863 Program） （）
the Science & Technology Plan of Guangdong Province,China （）
Guangdong Natural Science Foundation （）
the Science &Technology Plan of Guangzhou, China （）
the Opened Fund of The State Key Laboratory on Integrated Opto-electronics （）
