电源学报2016，Vol.14Issue(4)：52-58,7.DOI:10.13234/j.issn.2095-2805.2016.4.52
基于碳化硅功率器件的宽输入电压双管正激式直流电源研究
Research on Wide Input Voltage and Two Switches Forward Topology DC Supply Unit with Silicon Carbide Power Devices
摘要
Abstract
In this paper a power supply unit (PSU) is proposed, which is used in the grid connected inverter with high power, wide input voltage and better output dynamic characteristics. The PSU adopts silicon carbide(SiC)power de-vices and two switches forward topology with output power 1 000 W. Using the high efficiency PWM control technology, the PSU gets a better work under the PV array with instable voltage. First, the characteristic of SiC power devices is in-troduced, and then, much analysis on the principle and characteristic of the two switches forward topology are given. At the same time the detail design on the SiC-MOSFET drive circuit and the unit of function circuits are analysed, and many verification tests are done for the PSU. The test results prove the feasibility and the superiority of this design.关键词
宽电压输入/双管正激式/碳化硅功率器件Key words
wide input voltage/two switches forward/silicon carbide SiC power devices分类
信息技术与安全科学引用本文复制引用
王长庚,谢敬仁,沙龙..基于碳化硅功率器件的宽输入电压双管正激式直流电源研究[J].电源学报,2016,14(4):52-58,7.基金项目
国家高技术研究发展计划（863计划）资助项目（2014AA052402） Project Supported by the National High-tech R&D Program of China （863 Program） （）
