吉林大学学报（理学版）2016，Vol.54Issue(4)：878-886,9.DOI:10.13413/j.cnki.jdxblxb.2016.04.36
CdSe 纳米棒阵列的制备及其光电化学性能
Synthesis and Photoelectrochemical Properties of CdSe Nanorods Arrays
摘要
Abstract
CdSe nanorods arrays were grown on ITO substrate by electrochemical deposition method at room temperature.Using X-ray diffraction (XRD),energy dispersive X-ray (EDX),field emission scanning electron microscopy (FESEM)and UV-Vis absorption spectroscopy,we characterized the CdSe nanorods array,and studied its photoelectric chemical properties.We tested the photoelectric properties of CdSe nanorods array electrodes under the standard three electrode system.The results show that the sample is preferentially grown along [001 ]direction,and has obvious light response properties.When the light intensity is 100 mW/cm2 ,the optical current density (J sc ),open circuit voltage (V oc ), the fill factor (FF ) are 2.93 mA/cm2 , 1.1 6 V, 0.278, and the photoelectric conversion efficiency of the batteryη=0.947%.关键词
CdSe 纳米棒/电化学沉积/光电化学性能Key words
CdSe nanorod/electrochemical deposition/photoelectric chemical property分类
通用工业技术引用本文复制引用
田乐成,张鑫,丁娟,杨海滨,李云辉,绍晶,孙晶,董群,凌宏志,王硕,温祖旺..CdSe 纳米棒阵列的制备及其光电化学性能[J].吉林大学学报（理学版）,2016,54(4):878-886,9.基金项目
国家自然科学基金(批准号:51272086)、吉林省科技发展计划项目(批准号:20110417)和长春理工大学青年基金(批准号:XQNJJ-2015-09) （批准号:51272086）
