无机材料学报2016，Vol.31Issue(7)：745-750,6.DOI:10.15541/jim20150613
双沟道层对氮掺杂非晶氧化铟锌薄膜晶体管的影响
Influence of Double Channel Layers on the Performance of Nitrogen Doped Indium-zinc-oxide Thin Film Transistors
摘要
Abstract
The nitrogen-doped amorphous indium-zinc-oxide thin film transistors with double channel layers (a-IZO/IZON-TFTs) were fabricated by RF magnetron sputtering of IZO target on the thermal oxidized p-type Si substrate. Influence of the double channel layers on the electrical performance and thermal stability of the devices were investigated. It is found that a-IZO/IZON-TFTs have high field effect mobility of 23.26 cm2/(V×s) and more positively shifted threshold voltage than that of a-IZO-TFTs. This is ascribed to the doped nitrogen which can help reduce oxygen vacancy in the channel layer, suppress carrier concentration and make the devices have a better threshold voltage. Meanwhile, employing a-IZO thin film can avoid the sharp drop of field effect mobility and drain on current caused by nitrogen doping on a-IZON layer, leading to promotingIon/Iof ratio effectively. Besides, ac-cording to the transfer characteristics measured at temperatures from 298 K to 423 K, devices with a-IZO/IZON double layers have superior performance and thermal stability to TFTs of single channel layer, which can be as-cribed to the protective effect of a-IZON thin film on the channel layers. The doped nitrogen can reduce the adsorp-tion/desorption reaction of oxygen molecules on the back channel layer, leading to a significant improvement on thermal stability of the devices.关键词
双沟道层/氮气掺杂/温度稳定性/薄膜晶体管Key words
double channel layers/nitrogen doped/thermal stability/thin film transistors分类
电子信息工程引用本文复制引用
王乃倩,张群,谢汉萍..双沟道层对氮掺杂非晶氧化铟锌薄膜晶体管的影响[J].无机材料学报,2016,31(7):745-750,6.基金项目
国家自然科学基金重点项目(61136004,61471126)@@@@National Natural Science Foundation of China (61136004,61471126) （61136004,61471126）
