原子与分子物理学报2016，Vol.33Issue(4)：689-693,5.DOI:10.3969/j.issn.1000-0364.2016.08.020
直接带隙 Ge 耦合双量子阱中的光吸收系数
Absorption coefficient in direct-gap Ge double coupled quantum wells
摘要
Abstract
Within the framework of the effective -mass approximation , we study the dependences of the inter-band optical absorption coefficient and threshold energy on the structure parameters of the direct -gap Ge/GeSi double coupled quantum wells .It is found that when the well width is increased , the intensity of the interband optical absorption is reduced .Moreover , the threshold energy is decreased and the absorption peak is moved to-wards the lower energy .Red shift is observed .The intensity of the interband optical absorption increases consid-erably with the increasing of the coupling effects between the quantum wells .Furthermore, in comparison to the asymmetry double quantum wells , the coupling effects on the optical absorption coefficient are more significant in the symmetric double coupled quantum wells .关键词
耦合量子阱/吸收系数/阈值能量Key words
Coupled Quantum wells/Absorption Coefficient/Threshold energy引用本文复制引用
段坤杰,衡丽君..直接带隙 Ge 耦合双量子阱中的光吸收系数[J].原子与分子物理学报,2016,33(4):689-693,5.
