中国电机工程学报2016，Vol.36Issue(13)：3546-3557,12.DOI:10.13334/j.0258-8013.pcsee.160623
大容量电力电子器件结温提取原理综述及展望
Review and Prospect of Junction Temperature Extraction Principle of High Power Semiconductor Devices
摘要
Abstract
The great revolution of power production, transmission and consumption has led to an increasing demand for the reliable power converters with large-capacity. It is reported that temperature induced device failure is the most significant factor for the power electronics systems failure. The precise junction temperature extraction is essential for the aging estimation, state of health management and reliability assessment for the high power conversion systems. The state-of-the-art junction temperature measurement principles are thoroughly reviewed and compared. Especially, the temperature sensitive electrical parameter (TSEP) based method is detailedly introduced and evaluated from the criteria of linearity, sensitivity, genericity, etc. Finally, the major challenges and future possible research topics of on-line junction temperature extraction for high power semiconductor devices are summarized.关键词
大容量电力电子器件/结温提取/热敏感电参数Key words
high power semiconductor devices/junction temperature extraction/temperature sensitive electrical parameters分类
信息技术与安全科学引用本文复制引用
李武华,陈玉香,罗皓泽,周宇,杨欢,何湘宁..大容量电力电子器件结温提取原理综述及展望[J].中国电机工程学报,2016,36(13):3546-3557,12.基金项目
973青年科学家专题(2014CB247400)；国家自然科学基金重大项目(51490682)。 The National Basic Research Program of China (973 Program)(2014CB247400) （2014CB247400）
National Nature Science Foundation of China (51490682) （51490682）
