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Advanced BCD technology with vertical DMOS based on a semi-insulation structure

Ma Kui Fu Xinghua Lin Jiexin Yang Fashun

半导体学报（英文版）2016，Vol.37Issue(7)：56-62,7.

半导体学报（英文版）2016，Vol.37Issue(7)：56-62,7.DOI:10.1088/1674-4926/37/7/074004

Advanced BCD technology with vertical DMOS based on a semi-insulation structure

Ma Kui ¹Fu Xinghua ¹Lin Jiexin ¹Yang Fashun¹

作者信息

1. Department of Electronics,Guizhou University,Guiyang 550025,China
折叠

摘要

关键词

semi-insulation structure/vertical DMOS/BCD technology/integrated circuit

Key words

semi-insulation structure/vertical DMOS/BCD technology/integrated circuit

引用本文复制引用

Ma Kui,Fu Xinghua,Lin Jiexin,Yang Fashun..Advanced BCD technology with vertical DMOS based on a semi-insulation structure[J].半导体学报（英文版）,2016,37(7):56-62,7.

基金项目

Project supported by the National Natural Science Foundation of China (No.61464002),the Science and Technology Fund of Guizhou Province (No.Qian Ke He J Zi [2014]2066),and the Dr.Fund of Guizhou University (No.Gui Da Ren Ji He Zi (2013)20Hao). （No.61464002）

半导体学报（英文版）

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ISSN：1674-4926

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