首页|期刊导航|半导体学报（英文版）|Theoretical modification of the negative Miller capacitance during the switching transients of IGBTs
Theoretical modification of the negative Miller capacitance during the switching transients of IGBTsOACSCDCSTPCD
Theoretical modification of the negative Miller capacitance during the switching transients of IGBTs
Teng Yuan;Zhu Yangjun;Han Zhengsheng;Ye Tianchun
Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,ChinaInstitute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,ChinaInstitute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,ChinaInstitute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
IGBTnegative Miller capacitancetheoretical analysis
IGBTnegative Miller capacitancetheoretical analysis
《半导体学报（英文版）》 2016 (7)
63-67,5
Project supported by the National Major Science and Technology Special Project (No.2013ZX02305005-002),and the National Natural Science Foundation Major Program (No.51490681).
评论