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Theoretical modification of the negative Miller capacitance during the switching transients of IGBTs

Teng Yuan Zhu Yangjun Han Zhengsheng Ye Tianchun

半导体学报（英文版）2016，Vol.37Issue(7)：63-67,5.

半导体学报（英文版）2016，Vol.37Issue(7)：63-67,5.DOI:10.1088/1674-4926/37/7/074005

Theoretical modification of the negative Miller capacitance during the switching transients of IGBTs

Teng Yuan ¹Zhu Yangjun ¹Han Zhengsheng ¹Ye Tianchun¹

作者信息

1. Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
折叠

摘要

关键词

IGBT/negative Miller capacitance/theoretical analysis

Key words

IGBT/negative Miller capacitance/theoretical analysis

引用本文复制引用

Teng Yuan,Zhu Yangjun,Han Zhengsheng,Ye Tianchun..Theoretical modification of the negative Miller capacitance during the switching transients of IGBTs[J].半导体学报（英文版）,2016,37(7):63-67,5.

基金项目

Project supported by the National Major Science and Technology Special Project (No.2013ZX02305005-002),and the National Natural Science Foundation Major Program (No.51490681). （No.2013ZX02305005-002）

半导体学报（英文版）

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ISSN：1674-4926

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