电子学报2016，Vol.44Issue(7)：1763-1771,9.DOI:10.3969/j.issn.0372-2112.2016.07.035
Si和SiGe三极管Early效应模型及在电路仿真器中的应用综述
Review on EarIy Effect ModeI of Si and SiGe Transistors and AppIications to Circu it Si mu Iators
摘要
Abstract
As a key factor representing the bipolar transistor characteristics,the Early effect influences the output transconductance,the transfer current,the base transit time,the current gain,the diffusion capacitance,and so on.In this pa-per,we begin with the primary definition of the Early effect,overview the origin of the Early voltage,the development of the model,and the applications to Si and SiGe circuit simulators,with details as follows:(1 )Summarize the basic Early effect model of the Si bipolar transistor,and the introduction into SPICE,then describe the improvement of VBIC model in view of limitations of SPICE.(2)As SPICE and VBIC are unable to describe the introduction of Ge profile into the base,we review the modeling methods of the Early voltage with SiGe HBTs,based on the modeling ideas of Mextram and HICUM,two SiGe HBT standard models.(3)Sum up the strengths and weaknesses of present models for the Early effect.关键词
Early效应/三极管/SPICE/积分电荷控制关系Key words
Early effect/bipolar transistor/SPICE/integral charge control relation(ICCR)分类
信息技术与安全科学引用本文复制引用
徐小波,张林,王晓艳,谷文萍,胡辉勇,葛建华..Si和SiGe三极管Early效应模型及在电路仿真器中的应用综述[J].电子学报,2016,44(7):1763-1771,9.基金项目
中国博士后科学基金（No．2013M540732）；国家自然科学基金（No．61504011）；陕西省自然科学基金（No．2014JQ8344， No．2015JM6357）；西安市科技计划项目（No．CXY1441（9））；中央高校基本科研业务费 （）
