中国电机工程学报2016，Vol.36Issue(15)：4224-4231,8.DOI:10.13334/j.0258-8013.pcsee.151906
SiC MOSFET栅极电容提取实验方法及影响因素研究
A SiC MOSFET Gate Capacitance Extraction Method and Influence Factors Research
摘要
Abstract
The use of SiC MOSFET is now rapidly growing because of its good compatibility with the Si MOSFET and IGBT. However, the absence of effective methods to extract its gate capacitance parameters, such asCGS andCOX, limits the performance evaluations and simulator models, and restricts the development of the device application level.Based on a typical resistive load circuit, an experimental method was presented for measuring gate capacitances, which could resolve the difficulties in calculating the gate capacitances due to gate current variation during the turn-on transient state. The proposed method could maintain the gate current constant during the turn-on transient state and only required a simple calculation. The comparisons between the experiment data and datasheet results show a good agreement, which prove the validity of the presented method. In addition, the results under different loads and temperatures exhibit good consistency, which are different under different DC voltage. The results are also more stable at a higher DC voltage.关键词
SiC MOSFET/栅极电容/参数提取/恒流源电路Key words
SiC MOSFET/gate capacitances/parameters extraction/constant current source circuit分类
信息技术与安全科学引用本文复制引用
李辉,廖兴林,曾正,邵伟华,胡姚刚,肖洪伟,刘海涛..SiC MOSFET栅极电容提取实验方法及影响因素研究[J].中国电机工程学报,2016,36(15):4224-4231,8.基金项目
国家自然科学基金项目(51377184)；国际科技合作专项资助(2013DFG61520)；中央高校基本科研业务费专项基金项目(106112016CDJZR158802)。Project Supported by National Natural Science Foundation of China (51377184) （51377184）
International Science & Technology Cooperation Program of China (2013DFG61520) （2013DFG61520）
Fundamental Research Funds for the Central Universities (106112016CDJZR158802) （106112016CDJZR158802）
