强激光与粒子束2016，Vol.28Issue(10)：103002-1-103002-5,5.DOI:10.11884/HPLPB201628.151206
高电子迁移率晶体管放大器高功率微波损伤机理
High power microwave damage mechanism on high electron mobility transistor amplifier
闫涛 1李平1
作者信息
- 1. 西北核技术研究所，高功率微波技术重点实验室，西安 710024
- 折叠
摘要
Abstract
The device model of AlGaAs/InGaAs high electron mobility transistor(HEMT)low noise amplifier with 0.25 μm gate length is established using semiconductor simulation tool and the damage mechanism of 1 GHz microwave injected from gate and drain on HEMT is studied based on various electric field,current density and lattice temperature in device.The simulation re-sults show that when microwave with 40.1 dBm power level is injected from gate,the peak temperature of HEMT will rise with oscillation and achieve the failure level finally.The location beneath the gate close to source is most susceptible to be damaged due to the effect of high current density path and strong electric field.The device responds with different processes when microwave signal with different power level is injected from drain electrode.HEMT would be damaged in the first cycle if the injected power is higher than the threshold.The position near drain electrode is most susceptible to be damaged.Compared with gate injection, it’s more difficult to damage the device when 1 GHz microwave is injected from drain.关键词
高电子迁移率晶体管/低噪声放大器/高功率微波/不同端口Key words
high electron mobility transistor/low noise amplifier/high power microwave/different electrode引用本文复制引用
闫涛,李平..高电子迁移率晶体管放大器高功率微波损伤机理[J].强激光与粒子束,2016,28(10):103002-1-103002-5,5.
