电讯技术2016，Vol.56Issue(8)：873-878,6.DOI:10.3969/j.issn.1001-893x.2016.08.008
一种新研制的W频段固态GaN功率放大器毫米波源
A Newly-developed W-band Solid-state GaN Power Amplifier Millimeter Wave Source
摘要
Abstract
This paper introduces a newly-developed W-band solid-state GaN power amplifier millimeter wave(MMW) source,gives its system composition and operational principle,and provides the basic per-formance and experimental results of primary components including W-band solid-state Gunn driving source,W-band guide-microstrip line transposition and main amplifier chip. The MMW source operates at 94 GHz,its continuous wave power output is larger than 300 mW,linear gain is 10 dB,power-added effi-ciency( PAE) is greater than 16%. During the development of W-band solid-state MMW source, the choice of its monolithic microwave integrated circuit( MMIC) power amplifier of semiconductor material has undergone GaN,GaAs and InP,which clearly demonstrates that the output power,gain,efficiency and high temperature performance of W-band GaN MMIC power amplifier is superior to that of other solid-state MMIC power amplifiers. The high power technology of W-band solid-state GaN MMIC is likely to result in new revolutionized technology and application in the MMW field.关键词
毫米波源/GaN功率放大器/W频段/单片微波集成电路/连续波Key words
millimeter wave source/GaN power amplifier/W-band/MMIC/continous wave分类
信息技术与安全科学引用本文复制引用
梁勤金,石小燕,潘文武,黄吉金..一种新研制的W频段固态GaN功率放大器毫米波源[J].电讯技术,2016,56(8):873-878,6.基金项目
国家高技术研究发展计划(863计划)项目Foundation Item:The National High-tech R&D Program of China(863 Program) （863计划）
