Development of 17 kV 4H-SiC PiN diode

Huang Runhua Tao Yonghong Wang Ling Chen Gang Bai Song Li Rui Li Yun

半导体学报（英文版）2016，Vol.37Issue(8)：45-48,4.

半导体学报（英文版）2016，Vol.37Issue(8)：45-48,4.DOI:10.1088/1674-4926/37/8/084001

Huang Runhua ¹Tao Yonghong ¹Wang Ling ¹Chen Gang ¹Bai Song ¹Li Rui ¹Li Yun¹

作者信息

1. State Key Laboratory of Wide-Bandgap Semiconductor Power Electronics, Nanjing Electronic Devices Institute, Nanjing 210096, China
折叠

4H-SiC/power device/termination/JTE

4H-SiC/power device/termination/JTE

Huang Runhua,Tao Yonghong,Wang Ling,Chen Gang,Bai Song,Li Rui,Li Yun..Development of 17 kV 4H-SiC PiN diode[J].半导体学报（英文版）,2016,37(8):45-48,4.

Project supported by the National High Technology Research and Development Program of China (No.2014AA041401). （No.2014AA041401）

OACSCDCSTPCDEI

ISSN：1674-4926

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