半导体学报（英文版）2016，Vol.37Issue(9)：26-32,7.DOI:10.1088/1674-4926/37/9/092003
Semiconductor steady state defect effective Fermi level and deep level transient spectroscopy depth profiling
Semiconductor steady state defect effective Fermi level and deep level transient spectroscopy depth profiling
Ken K.Chin 1Zimeng Cheng1
作者信息
- 1. Department of Physics and CNBM New Energy Materials Research Center, New Jersey Institute of Technology(NJIT), Newark, NJ 07102, USA
- 折叠
摘要
关键词
Fermi level/deep level transient spectroscopy/Schottky junctionKey words
Fermi level/deep level transient spectroscopy/Schottky junction引用本文复制引用
Ken K.Chin,Zimeng Cheng..Semiconductor steady state defect effective Fermi level and deep level transient spectroscopy depth profiling[J].半导体学报（英文版）,2016,37(9):26-32,7.
