液晶与显示2016，Vol.31Issue(8)：773-777,5.DOI:10.3788/YJYXS20163108.0773
利用CsN3n型掺杂电子传输层改善OLED 器件性能的研究
Improved properties of organic light-emitting devices by utilizing CsN3 n-type doped electron transport layer
摘要
Abstract
To enhance the electron injecting and transporting ability and improve the performance of organic light-emitting device,the organic electron transport material Bphen was electrically doped by using CsN3 as n-type dopant in this work.The devices of ITO/MoO 3 (2 nm)/NPB(50 nm)/Alq3 (30 nm)/Bphen(15 nm)/Bphen:CsN3 (15 nm,x %,x =10,15,20)/Al(100 nm)were prepared.The ex-perimental results show that the CsN3 is an effective n-type dopant.The electron injection barriers was reduced and the electron injecting and transporting ability of the device was enhanced by using the Bphen:CsN3 doped electron transport layer.As a result,the turn-on voltage was decreased,and the brightness and the luminous efficiency of the device were improved.The optimal doping concentration of the device was 10%.The device shows a turn-on voltage of 2.3 V and the maximum luminance rea-ches 29 060 cd/m2 at 7.2 V,more than 2.5 times of that of the device without doping.The maximum current efficiency was 3.27 cd/A when the voltage was 6.6 V.When the doping concentration further increases,the efficiency of the device is decreased owning to Cs atom quenching the luminescence cen-ter induced by interdiffusion.关键词
CsN3/n 型掺杂/有机电致发光器件/电流效率Key words
CsN3/n-type dopant/organic light-emitting devices/current efficiency分类
信息技术与安全科学引用本文复制引用
于瑶瑶,陈星明,金玉,吴志军,陈燕..利用CsN3n型掺杂电子传输层改善OLED 器件性能的研究[J].液晶与显示,2016,31(8):773-777,5.基金项目
国家自然科学基金资助项目(No．61404053) Supported by National Natural Science Foundation of China(No．61404053) （No．61404053）
