电工技术学报2016，Vol.31Issue(18)：134-141,8.
IGBT模块栅极电压米勒平台时延与结温的关系
The Relationship Between Junction Temperature and Time Delay of Gate Voltage Miller Plateau of IGBT Module
摘要
Abstract
The relationship between time delay of gate voltage Miller plateau on insulated gate bipolar transistor (IGBT) module and junction temperature has been researched in this paper. Firstly, the temperature characteristic of Miller plateau time delay has been analyzed. Secondly, a measurement system of gate voltage Miller plateau has been set up, which could measure the delay time of Miller plateau accurately and reliably. Finally, experiments verify the temperature characteristic of Miller plateau time delay. Both the simulation and the experimental results show that the time delay of Miller plateau varies with the junction temperature, which has a good linear relationship. In this paper, the time delay of Miller plateau increases 0.74 ns as the junction temperature increases 1℃.关键词
IGBT/栅极电压/米勒平台/温度特性Key words
Insulated gate bipolar transistor/gate voltage/Miller plateau/temperature characteristic分类
信息技术与安全科学引用本文复制引用
方化潮,郑利兵,王春雷,方光荣,韩立..IGBT模块栅极电压米勒平台时延与结温的关系[J].电工技术学报,2016,31(18):134-141,8.基金项目
国家重大科技专项02专项智能电网高压芯片封装与模块技术研发及产业化资助项目（2011ZX02603）。 （）
