光子传感器（英文版）2016，Vol.6Issue(4)：345-350,6.DOI:10.1007/s13320-016-0338-4
Characteristics of Heat-Annealed Silicon Homojunction Infrared Photodetector Fabricated by Plasma-Assisted Technique
Characteristics of Heat-Annealed Silicon Homojunction Infrared Photodetector Fabricated by Plasma-Assisted Technique
Oday A.HAMMADI1
作者信息
- 1. Department of Physics,College of Education,Al-Iraqia University,Baghdad,IRAQ
- 折叠
摘要
关键词
Photodetectors/homojunction/spectral responsivity/plasma-induced etchingKey words
Photodetectors/homojunction/spectral responsivity/plasma-induced etching引用本文复制引用
Oday A.HAMMADI..Characteristics of Heat-Annealed Silicon Homojunction Infrared Photodetector Fabricated by Plasma-Assisted Technique[J].光子传感器（英文版）,2016,6(4):345-350,6.
