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Increased effective reflection and transmission at the GaN-sapphire interface of LEDs grown on patterned sapphire substrates

Wu Dongxue Ma Ping Liu Boting Zhang Shuo Wang Junxi Li Jinmin

半导体学报（英文版）2016，Vol.37Issue(10)：60-64,5.

半导体学报（英文版）2016，Vol.37Issue(10)：60-64,5.DOI:10.1088/1674-4926/37/10/104003

Increased effective reflection and transmission at the GaN-sapphire interface of LEDs grown on patterned sapphire substrates

Wu Dongxue ¹Ma Ping ²Liu Boting ³Zhang Shuo ¹Wang Junxi ²Li Jinmin³

作者信息

1. Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2. State Key Laboratory of Solid State Lighting, Beijing 100083, China
3. Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China
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摘要

关键词

light output power/transmission/effective reflection/patterned sapphire substrate/light-emitting diodes

Key words

light output power/transmission/effective reflection/patterned sapphire substrate/light-emitting diodes

引用本文复制引用

Wu Dongxue,Ma Ping,Liu Boting,Zhang Shuo,Wang Junxi,Li Jinmin..Increased effective reflection and transmission at the GaN-sapphire interface of LEDs grown on patterned sapphire substrates[J].半导体学报（英文版）,2016,37(10):60-64,5.

基金项目

Project supported by the National High Technology Program of China (No.Y48A040000) and the National High Technology Program of China (No.Y48A040000). （No.Y48A040000）

半导体学报（英文版）

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ISSN：1674-4926

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