硅酸盐通报2016，Vol.35Issue(9)：2946-2949,4.
非晶铟镓锌氧化物薄膜晶体管关键工艺研究
Key Process Research of Indium Gallium Zinc Oxide Thin Film Transistor with Etch Stop Layer
高锦成 1李正亮 1曹占锋 1姚琪 1关峰 1惠官宝1
作者信息
- 1. 京东方科技集团股份有限公司，北京 100176
- 折叠
摘要
Abstract
In order to improve the performance of Indium Gallium Zinc Oxide Thin Film Transistor , IGZO-TFT with etch-stop layer was prepared in 2 .5 G experimental line .The effects of O 2 concentration during IGZO deposition , N2 O plasma treatment , the temperature of ESL deposition and the N 2 O/SiH4 ratio on the IGZO TFT Vth were systemically studied .The results show that the Vth would shift to positive position as the increasing of O 2 concentration , N2 O plasma treatment , and the decreasing of ESL deposition temperature .关键词
铟镓锌氧化物薄膜晶体管/刻蚀阻挡层/N2 O等离子体/阈值电压Key words
IGZO TFT/etch stop layer/N2 O plasma/threshold voltage分类
信息技术与安全科学引用本文复制引用
高锦成,李正亮,曹占锋,姚琪,关峰,惠官宝..非晶铟镓锌氧化物薄膜晶体管关键工艺研究[J].硅酸盐通报,2016,35(9):2946-2949,4.
