硅酸盐学报2016，Vol.44Issue(10)：1446-1450,5.DOI:10.14062/j.issn.0454-5648.2016.10.09
Ho3+掺杂Bi4Si3O12晶体的生长与光谱特性
Growth and Spectral Properties of Ho-doped Bi4Si3O12 Crystal
摘要
Abstract
Ho-doped Bi4Si3O12(BSO:Ho) crystal with 25 mm in diameter and 100 mm in length was grown by a modified vertical Bridgman method. The transmission spectra, excitation spectra, emission spectra and decay time of the as-grown crystal were investigated. Similar to pure BSO, BSO:Ho crystal has excellent optical transmittance. It is approximately 80% at 350–800 nm with an absorption edge at 286 nm, and some absorption peaks are related to Ho3+ doping appeared in the spectrum. The excitation band is located at 240–310 nm with the maximum peak at 290 nm. In addition to the emission band at 480 nm, there are several intense emission peaks at 573 nm, which are attributed to Ho3+ doping. The fluorescence decay time for main lighting component of BSO:Ho crystal is 94.41 ns, it indicate doping 0.1% Ho3+(mole fraction) will help improve scintillation performance of BSO crystals.关键词
硅酸铋晶体/坩埚下降法/晶体生长/钬掺杂/光谱性能Key words
bismuth silicate crystal/vertical Bridgman method/crystal growth/holmium doping/spectra property分类
数理科学引用本文复制引用
温裕贤,张彦,储耀卿,杨波波,徐家跃..Ho3+掺杂Bi4Si3O12晶体的生长与光谱特性[J].硅酸盐学报,2016,44(10):1446-1450,5.基金项目
国家自然科学基金项目(51572175，51342007)。 （51572175，51342007）
