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含Ti-Al阻挡层的硅基Na0.5Bi0.5TiO3电容器的结构与电学性能

宋建民 罗来慧 宋安英 魏丽静 代秀红 方晓燕 李振娜 刘保亭

硅酸盐学报2016,Vol.44Issue(10):1477-1481,5.
硅酸盐学报2016,Vol.44Issue(10):1477-1481,5.DOI:10.14062/j.issn.0454-5648.2016.10.14

含Ti-Al阻挡层的硅基Na0.5Bi0.5TiO3电容器的结构与电学性能

Structure and Electrical Properties of Na0.5Bi0.5TiO3 Capacitor using Ti-Al as Barrier Layer on Si Substrate

宋建民 1罗来慧 2宋安英 3魏丽静 1代秀红 1方晓燕 4李振娜 1刘保亭1

作者信息

  • 1. 河北省光电信息材料重点实验室,河北大学物理科学与技术学院,河北保定 071002
  • 2. 河北农业大学理学院,河北保定 071001
  • 3. 宁波大学理学院,浙江宁波 315211
  • 4. 华北电力大学科技学院,河北保定 071051
  • 折叠

摘要

Abstract

La0.5Sr0.5CoO3(LSCO)/Na0.5Bi0.5TiO3/La0.5Sr0.5CoO3(LSCO/NBT/LSCO) ferroelectric capacitor heterostructure was fabricated on (001)Si substrate with amorphous Ti–Al film as a diffusion barrier layer, in which the LSCO and Ti-Al films both were prepared by magnetron sputtering (MS), and the NBT was prepared by a pulsed laser deposition method (PLD). The structural and physical properties of Na0.5Bi0.5TiO3 film were characterized. The results show that the Ti-Al barrier is amorphous, and the NBT film consists of the crystallines. The LSCO/NBT/LSCO capacitor presents a saturated hysteresis loop, a high remnant polarization (i.e., 47.9μC/cm2), a small pulse width dependence, good fatigue and retention characteristics at an applied field of 1500kV/cm. Moreover, the leakage mechanism of the LSCO/NBT/LSCO ferroelectric capacitor was investigated. The LSCO/NBT/LSCO capacitor has the Ohm conduction behavior at applied fields of < 400kV/cm and bulk-limited space charge-limited conduction (SCLC) at the applied fields of > 400kV/cm.

关键词

钛酸铋钠薄膜/铁电电容器/剩余极化强度/漏电流

Key words

sodium bismuth titanate thin films/ferroelectric capacitors/remnant polarization/leakage current

分类

数理科学

引用本文复制引用

宋建民,罗来慧,宋安英,魏丽静,代秀红,方晓燕,李振娜,刘保亭..含Ti-Al阻挡层的硅基Na0.5Bi0.5TiO3电容器的结构与电学性能[J].硅酸盐学报,2016,44(10):1477-1481,5.

基金项目

国家自然科学基金项目(11374086);河北省自然科学基金项目(E2014201188, E2014201063);保定市科技局基金项目(15ZG048);河北农业大学(ZD201614)资助项目。 (11374086)

硅酸盐学报

OA北大核心CSCDCSTPCD

0454-5648

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