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中频磁控溅射法制备掺氢氮化硅减反/钝化复合功能薄膜的研究

沈国晟 陈文理 李仲 洪瑞江

中山大学学报(自然科学版)2016,Vol.55Issue(5):31-36,6.
中山大学学报(自然科学版)2016,Vol.55Issue(5):31-36,6.DOI:10.13471/j.cnki.acta.snus.2016.05.006

中频磁控溅射法制备掺氢氮化硅减反/钝化复合功能薄膜的研究

Silicon nitride thin films with passivation and anti-reflection properties prepared by mid-frequency magnetron sputtering

沈国晟 1陈文理 1李仲 2洪瑞江1

作者信息

  • 1. 中山大学太阳能系统研究所∥广东省光伏技术重点实验室,广东 广州 510006
  • 2. 青海民族大学物理与电子信息科学学院,青海 西宁 810007
  • 折叠

摘要

Abstract

Silicon nitride (SiNx )film with excellent quality in both passivation and anti-reflection was deposited by mid-frequency (MF)magnetron sputtering process.The structure,optical property and oth-er relevant performances of the thin films were investigated.The results show that,in the range of 300 -1 1 00 nm,the average reflection of the textured silicon decreased from 1 4.86% to 5.50% and 6.58%respectively by applying two different single layer of SiNx films.The average reflection further decreased to a value of 4.03% when a multilayer of SiNx +SiOx Ny film was applied.Meanwhile,a hydrogen doped silicon nitride (SiNx∶H)film was prepared for the passivation purpose.Based on the parameter optimiza-tion,two series of the composite films including SiNx∶H (1 5 nm in thickness) + SiNx + SiOx Ny and SiNx∶H (30 nm in thickness) +SiNx +SiOx Ny were prepared.The average reflections of the composite films reached at 5.88% and 5.43%,respectively.The films were then applied to the crystalline silicon solar cells,an open circuit voltage of 575 mV were achieved,indicating the composite film with a good passivation property.

关键词

太阳电池/掺氢氮化硅薄膜/减反膜/钝化膜/中频磁控溅射

Key words

solar cell/hydrogen doped silicon nitride/anti-reflection film/passivation film/mid-fre-quency magnetron sputtering

分类

信息技术与安全科学

引用本文复制引用

沈国晟,陈文理,李仲,洪瑞江..中频磁控溅射法制备掺氢氮化硅减反/钝化复合功能薄膜的研究[J].中山大学学报(自然科学版),2016,55(5):31-36,6.

基金项目

青海省应用基础研究计划资助项目(2014-ZJ -725);广东省科技计划资助项目 ()

中山大学学报(自然科学版)

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