西安电子科技大学学报（自然科学版）2016，Vol.43Issue(5)：178-182,5.DOI:10.3969/j.issn.1001-2400.2016.05.031
垂直式 MOCV D中生长参数对 GaN 材料生长的影响
Effect of growth parameters on GaN in a vertical MOCVD reactor
摘要
Abstract
A simulation of reactants in the transfer and reaction process during the GaN grow th in a vertical MOCVD reactor is presented . The results show that the GaN growth rate and thickness uniformity are all affected by the chamber pressure and the velocity of reactants into the chamber . With the increasing velocity of reactants into the chamber ,pre‐reaction will be enhanced ,GaN growth rate will be increased and thickness uniformity decreased . With the inlet velocity remaining the same and chamber pressure decreasing , the growth rate is improved within a certain scope , but the thickness uniformity may be increased at the same time with the thickness of the central region of the substrate increased .关键词
GaN/金属有机物化学气相淀积/生长速率/反应动力学Key words
GaN/MOCVD/GaN growth rate/reaction kinetics分类
信息技术与安全科学引用本文复制引用
冯兰胜,过润秋,张进成..垂直式 MOCV D中生长参数对 GaN 材料生长的影响[J].西安电子科技大学学报（自然科学版）,2016,43(5):178-182,5.基金项目
国家自然科学基金资助项目（61334002）；国家重大科技专项资助项目 （）
