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Simulated study on the InP/InGaAs DHBT under proton irradiation

Liu Min Zhang Yuming Lü Hongliang Zhang Yimen

半导体学报（英文版）2016，Vol.37Issue(11)：50-53,4.

半导体学报（英文版）2016，Vol.37Issue(11)：50-53,4.DOI:10.1088/1674-4926/37/11/114005

Simulated study on the InP/InGaAs DHBT under proton irradiation

Liu Min ¹Zhang Yuming ¹Lü Hongliang ¹Zhang Yimen¹

作者信息

1. School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of China, Xi'an 710071, China
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摘要

关键词

heterojunction bipolar transistors/proton irradiation/InP/InGaAs/cutoff frequency

Key words

heterojunction bipolar transistors/proton irradiation/InP/InGaAs/cutoff frequency

引用本文复制引用

Liu Min,Zhang Yuming,Lü Hongliang,Zhang Yimen..Simulated study on the InP/InGaAs DHBT under proton irradiation[J].半导体学报（英文版）,2016,37(11):50-53,4.

基金项目

Project supported by the National Basic Research Program of China (No.2010CB327505),Advance Research project of China (No.51308xxxx06),and Advance Research Foundation of China(No.9140A08xxxx11DZ111). （No.2010CB327505）

半导体学报（英文版）

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ISSN：1674-4926

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