High-responsivity 40 Gbit/s InGaAs/InP PIN photodetectors integrated on silicon-on-insulator waveguide circuitsOACSCDCSTPCD

作者：Yin Dongdong;He Tingting;Han Qin;Lü Qianqian;Zhang Yejin;Yang Xiaohong

作者单位：State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083, ChinaState Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083, ChinaState Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083, ChinaState Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083, ChinaState Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083, ChinaState Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083, China

中文关键词：integrated photodetectorsbondingsilicon on insulatorevanescent wave

英文关键词：integrated photodetectorsbondingsilicon on insulatorevanescent wave

刊名：《半导体学报（英文版）》 2016 (11)

页码/页数：54-59,6

基金：Project supported by the High-Tech Research and Development Program of China (Nos.2015AA016904,2015AA012302),the National Basic Research Program of China (Nos.2012CB933503,2013CB932904),and the National Natural Foundation of China (Nos.61274069,61176053,61021003,61435002).

DOI：10.1088/1674-4926/37/11/114006