电工技术学报2016，Vol.31Issue(20)：161-169,9.
高压P-i-N二极管关断瞬态综合失效机理分析
Comprehensive Failure Mechanisms in High Voltage P-i-N Diode During Turn-off Transient
摘要
Abstract
In this paper, the turn-off transient failure of commercial high voltage multi-chip P-i-N diode under the rated parameters in clamped circuit is discussed from the circuit layout aspect and semiconductor mechanism aspect. Firstly, through the failure chips and failure waveforms, it is proved that the riskiest chip instead of the modules determines the reliability of power converter system. Besides, according to the filament current phenomenon of P-i-N diode under the deepest dynamic avalanche, the impact of local over temperature induced by the unbalanced current distribution is discussed. It is concluded that the failure mechanism of P-i-N is the positive feedback of thermoelectric coupling mechanism. Finally, based on the failure results and test conditions, the comprehensive failure mechanisms of power device are proposed. It is shown that the failure mechanisms are not induced by one single factor but the combined effects of all related factors.关键词
大功率电力电子器件/电流密度不均/瞬态热失控/雪崩击穿/综合失效机理Key words
High power modules/non-uniform current distribution/transient hot runaway/avalanche/comprehensive failure mechanism分类
信息技术与安全科学引用本文复制引用
罗皓泽,李武华,何湘宁..高压P-i-N二极管关断瞬态综合失效机理分析[J].电工技术学报,2016,31(20):161-169,9.基金项目
国家重点基础研究发展计划（973计划）资助项目（2014CB247400）。 （）
