电子器件2016，Vol.39Issue(5)：1043-1047,5.DOI:10.3969/j.issn.1005-9490.2016.05.005
基于聚乙烯咔唑的非挥发型阻变存储特性分析
Performance Analysis of Nonvolatile Resistive Switching Behavior Based on Poly(N-Vinyl Carbazole)
宋志章 1孙艳梅2
作者信息
- 1. 齐齐哈尔大学校办公室，黑龙江齐齐哈尔161006
- 2. 齐齐哈尔大学通信与电子工程学院，黑龙江齐齐哈尔161006
- 折叠
摘要
Abstract
Resistive switching device based on ITO/PVK/Al structure is fabricated to explore its resistive switching characteristics. The resistive switching behavior is measured. The experiment results show that the devices exhibit write-once-read-many(WORM)storage characteristics,and good retention and endurance property. The I-V curves fitting results show that the resistive switching mechanisms of the two states are different:the low resistance state is due to ohmic conduction mechanism,the high resistance state is due to space-charge limited current(SCLC)mecha⁃nism. Subsequently,a resistive switching model for ITO/PVK/Al structure is proposed.关键词
聚乙烯咔唑/阻变特性/开关态电流比/耐久特性Key words
Poly(N-vinylcarbazole)/resistive switching behavior/ON/OFF state current ratio/endurance property分类
信息技术与安全科学引用本文复制引用
宋志章,孙艳梅..基于聚乙烯咔唑的非挥发型阻变存储特性分析[J].电子器件,2016,39(5):1043-1047,5.
