电子器件2016，Vol.39Issue(5)：1140-1144,5.DOI:10.3969/j.issn.1005-9490.2016.05.024
基于180 nm COMS工艺的低功耗温度传感器电路设计
Low Power Temperature Sensor Circuit Design Based on COMS 180 nm Process
林卓彬 1杨华1
作者信息
- 1. 长春职业技术学院工程技术分院，长春130033
- 折叠
摘要
Abstract
In order to reduce the power consumption of the temperature sensor,a simple on-chip temperature-fre⁃quency converter circuit is proposed. The converter can detect temperature in terms of the proportional to absolute temperature(PTAT)current,and then converts the temperature equivalent to the frequency by using the source cou⁃pled multi-vibrator circuit. The proposed circuit has been designed and fabricated in a standard 180 nm CMOS tech⁃nology and occupies area of about 0.061 mm2. Through many practical measurement. The test results show that when the power supply voltage is 0.8 V+10%,the temperature sensor can work within the temperature range of-43℃~+85℃,and after a single point after correction,the maximum temperature error is less than ± 1℃.When the power supply voltage is 0.8 V,the average power loss at+85℃is only 500 nW.关键词
温度传感器/温度-频率转换器/PTAT/低功耗Key words
temperature sensor/temperature-frequency converter/PTAT/low power consumption分类
信息技术与安全科学引用本文复制引用
林卓彬,杨华..基于180 nm COMS工艺的低功耗温度传感器电路设计[J].电子器件,2016,39(5):1140-1144,5.
