液晶与显示2016，Vol.31Issue(10)：929-935,7.DOI:10.3788/YJYXS20163110.0929
TFT 光刻 DICD 均一性改善优化
Improvement of uniformity of TFT lithography DICD
张玉虎 1岳浩 1王军帽 1李亚文1
作者信息
- 1. 合肥京东方光电科技有限公司，安徽 合肥 230012
- 折叠
摘要
Abstract
In order to improve the uniformity of TFT lithography DICD,the reason for the difference of the DICD is analyzed,and a cycle improvement process is established.Its principle and method is illustrated.First,based on the principle that the photo resist absorbs the maximum light intensity on the best focal plane of the lithography system,and the DICD value is also minimum.Therefore,if the lithography plane is adjusted and the lithography plane trend is consistent with the best focal plane trend,the difference of DICD will be minimum.Then the difference of the DICD between the lithogra-phy area and the best focal plane area(DICD-DICDmin )is calculated,and the sign of DICD-DICDmin is judged by combining the stage flatness of the lithography area.Then the plane equation of DICD-DIC-Dmin is fitted by the least square method,and the plane is just the lithography trend plane,which also reflects the difference between the lithography plane and the best focal plane.Finally,the plane equa-tion is used to adjust the stage height of the lithography machine,and by adjusting the height of the stage in the lithography area,the lithography plane trend is consistent with the best focal plane trend.The results show that the uniformity of DICD can be improved by more than 30% by doing the experi-ment three times.关键词
DICD/最佳焦平面/平坦度/均一性/最小二乘法Key words
develop inspection critical dimension/the best focal plane/flatness/uniformity/the least square method分类
信息技术与安全科学引用本文复制引用
张玉虎,岳浩,王军帽,李亚文..TFT 光刻 DICD 均一性改善优化[J].液晶与显示,2016,31(10):929-935,7.
