太赫兹科学与电子信息学报2016，Vol.14Issue(5)：653-656,4.DOI:10.11805/TKYDA201605.0653
一种D波段低噪声放大器芯片设计
Design of D-band LNA chip
刘杰 1蒋均 2石向阳 1田遥岭2
作者信息
- 1. 中国工程物理研究院 电子工程研究所，四川绵阳 621999
- 2. 中国工程物理研究院 微系统与太赫兹研究中心，四川成都 610200
- 折叠
摘要
Abstract
A novel method of modified transistor model is introduced. The D-band transistor models of OMMIC D007IH and D-band Coplanar Waveguide(CPW) model are modified. The method determines dielectric constant of CPW model by simulation curve fitting. The value ofCGD in the transistor models is modified by curve fitting of CGY2191UH chipS-parameter measurement. A D-band Low Noise Amplifier(LNA) die is designed by the modified transistor model. The simulation results show that the LNA obtains a gain more than 29dB in 110GHz-170GHz range and the noise figure is lower than 6dB. The results validate the proposed method.关键词
D波段/低噪声放大器/单片微波集成电路/改变结构高电子迁移率晶体管(mHEMT)/参数提取/D007IH工艺Key words
D-band/Low Noise Amplifier/Monolithic Microwave Integrated Circuit/Metamorphic High Electron Mobility Transistor(mHEMT)/parameters extraction/D007IH分类
信息技术与安全科学引用本文复制引用
刘杰,蒋均,石向阳,田遥岭..一种D波段低噪声放大器芯片设计[J].太赫兹科学与电子信息学报,2016,14(5):653-656,4.
