太赫兹科学与电子信息学报2016，Vol.14Issue(5)：800-804,5.DOI:10.11805/TKYDA201605.0800
商用CMOS工艺SRAM脉冲中子辐射效应实验
Experimental investigations on pulsed neutron radiation effect on commercial CMOS SRAMs
齐超 1杨善潮 1刘岩 1陈伟 1林东生 1金晓明 1王晨辉1
作者信息
- 1. 西北核技术研究所 强脉冲辐射环境模拟与效应国家重点实验室，陕西 西安710024
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摘要
Abstract
For the purpose of investigating pulsed neutron radiation effect on Complementary Metal Oxide Semiconductor(CMOS) Static Random Access Memory(SRAMs),a Monte Carlo simulation method based on the hypothesis that the upsets are caused by the super positioning of Single Event Upset(SEUs) is presented. In the simulation, the percentages of SingleBit Upset(SBU) and pseudo Multiple Bit Upset(MBU) bits in total induced upset bits are calculated. Experiments on commercial SRAMs of three feature sizes are performed on Xi'an Pulsed Reactor under pulsed irradiation condition. Upset bits of SBU and Pseudo DBU obtained from the experiments, are shown to agree quite well with the simulation results. The mechanism of pulsed neutron inducing upsets is analyzed.关键词
脉冲中子/单粒子翻转/伪多位翻转/静态随机存储器Key words
pulsed neutron/Single Event Upset/Pseudo Multiple Bit Upset/Static Random Access Memory分类
信息技术与安全科学引用本文复制引用
齐超,杨善潮,刘岩,陈伟,林东生,金晓明,王晨辉..商用CMOS工艺SRAM脉冲中子辐射效应实验[J].太赫兹科学与电子信息学报,2016,14(5):800-804,5.
