电子学报2016，Vol.44Issue(11)：2646-2652,7.DOI:10.3969/j.issn.0372-2112.2016.11.012
CMOS反相器低频噪声模型及可靠性表征研究
Investigation on Low-Frequency Noise Models and Representation for Reliability of CMOS Inverter
摘要
Abstract
In order to characterize the reliability of CMOS inverter,a kind of low-frequency noise model is deduced in detail by using the characteristics of load current and output voltage,based on the carrier fluctuation theory,and the accuracy of the model was verified by experimental data.The experiment results indicate that load current power spectral follows the changing rule of the 1/fnoise,decreasing with the increase of frequency;the normalized noise power spectral density of load current decreases with the increase of the channel width or length.Using the experimental data,the relationship between 1/f noise and interface trap state densityof CMOS inverter is established.Verify that the 1/fnoise can be used to characterize the reliability of CMOS inverter.It is proved that the larger interface trap state density,the larger the noise magnitude,leading to the degradation of device reliability and significant rise in device invalidation rate.That provides a feasible and effective method for evaluating the reliability of CMOS inverter.关键词
COMS反相器/低频噪声/可靠性/缺陷Key words
CMOS inverter/low-frequency noise/reliability/defect分类
信息技术与安全科学引用本文复制引用
陈晓娟,陈东阳,吴洁..CMOS反相器低频噪声模型及可靠性表征研究[J].电子学报,2016,44(11):2646-2652,7.基金项目
国家自然科学基金 （）
