国防科技大学学报2016，Vol.38Issue(5)：20-25,6.DOI:10.11887/j.cn.201605004
65 nm工艺双层三维静态存储器的软错误分析与评估
Soft error analysis and evaluation of dual-layer 3 D SRAM based on 65 nm technology
摘要
Abstract
The 3D SRAM(three-dimensional static random access memory)will take the place of2D SRAM(two-dimensional static random access memory),and will be widely used in high performance microprocessor.However,3D SRAMstill suffers from the dangers of soft error.A novel3DSRAMsofterroranalysisplatformwasdesignedforstudyingthesofterrorcharacteristicof3DSRAM.Thesofterrorcharacteristicofthe designed 3D SRAMand the original 2D SRAMwere analyzed by using our designed platform.It is found that 3D SRAMand 2D SRAMhave the same upset cross section,but the soft error of3D SRAMis more serious than that of2D SRAM,which makes it difficult to harden 3D SRAMby using error correction codes technologies.At the static test mode,the upset sensitive nodes were only distributed in the memory array of both 3D SRAMand 2D SRAM.It indicates that the logic circuit can’t induce soft error at static test mode.关键词
三维静态存储器/软错误/分析平台/翻转截面/单粒子翻转/多位翻转Key words
three-dimensional static random access memory/soft error/analysis platform/cross section/single event upset/multi cell upset分类
信息技术与安全科学引用本文复制引用
李鹏,郭维,赵振宇,张民选,邓全,周宏伟..65 nm工艺双层三维静态存储器的软错误分析与评估[J].国防科技大学学报,2016,38(5):20-25,6.基金项目
国家自然科学基金资助项目（61373032，61303069）；高等学校博士学科点专项科研基金资助项目 （）
