半导体学报（英文版）2016，Vol.37Issue(12)：5-11,7.DOI:10.1088/1674-4926/37/12/122002
Effect of ultrasound on reverse leakage current of silicon Schottky barrier structure
Effect of ultrasound on reverse leakage current of silicon Schottky barrier structure
O. Ya Olikh 1K. V. Voitenko 1R. M. Burbelo 1Ja M. Olikh2
作者信息
- 1. Faculty of Physics, Taras Shevchenko National University of Kyiv, Kyiv 01601, Ukraine
- 2. V Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kyiv 03028, Ukraine
- 折叠
摘要
关键词
Schottky contact/ leakage current/ ultrasound influenceKey words
Schottky contact/ leakage current/ ultrasound influence引用本文复制引用
O. Ya Olikh,K. V. Voitenko,R. M. Burbelo,Ja M. Olikh..Effect of ultrasound on reverse leakage current of silicon Schottky barrier structure[J].半导体学报（英文版）,2016,37(12):5-11,7.
