Optimization design on breakdown voltage of AlGaN/GaN high-electron mobility transistorOACSCDCSTPCD

作者：Liu Yang;Chai Changchun;Shi Chunlei;Fan Qingyang;Liu Yuqian

作者单位：School of Microelectronics, Xidian University, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, ChinaSchool of Microelectronics, Xidian University, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, ChinaSchool of Microelectronics, Xidian University, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, ChinaSchool of Microelectronics, Xidian University, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, ChinaSchool of Microelectronics, Xidian University, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China

中文关键词：GaN HEMT optimization design breakdown voltage cap layer

英文关键词：GaN HEMT optimization design breakdown voltage cap layer

刊名：《半导体学报（英文版）》 2016 (12)

页码/页数：40-44,5

基金：Project supported by the National Basic Research Program of China (No.2014CB339900) and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology,China Academy of Engineering Physics (No.2015-0214.XY.K).

DOI：10.1088/1674-4926/37/12/124002