首页|期刊导航|半导体学报（英文版）|Total ionizing dose radiation effects on NMOS parasitic transistors in advanced bulk CMOS technology devices
半导体学报（英文版）2016，Vol.37Issue(12)：45-50,6.DOI:10.1088/1674-4926/37/12/124003
Total ionizing dose radiation effects on NMOS parasitic transistors in advanced bulk CMOS technology devices
Total ionizing dose radiation effects on NMOS parasitic transistors in advanced bulk CMOS technology devices
摘要
关键词
total ionizing dose (TID)/ bulk CMOS/ shallow trench isolation (STI)/ oxide trapped charge/ interface trapsKey words
total ionizing dose (TID)/ bulk CMOS/ shallow trench isolation (STI)/ oxide trapped charge/ interface traps引用本文复制引用
He Baoping,Wang Zujun,Sheng Jiangkun,Huang Shaoyan..Total ionizing dose radiation effects on NMOS parasitic transistors in advanced bulk CMOS technology devices[J].半导体学报（英文版）,2016,37(12):45-50,6.基金项目
Project supported by the National Natural Science Foundation of China (No.11305126). （No.11305126）
