发光学报2016，Vol.37Issue(12)：1464-1470,7.DOI:10.3788/fgxb20163712.1464
氧化硅薄膜中掺杂Tb3＋离子的发光敏化
Photoluminescence of SiO2 Thin Films Doped by Tb3+
摘要
Abstract
SiO2∶Tb3+ films were prepared on silicon chips by sol-gel method. The photolumines-cence characterizations of the films were studied by fluorescence analysis, and the ways to improve the luminescence were explored and analyzed. Excited by 245 nm, the peaks of transition emissions of 5D4-7FJ(J= 6, 5, 4, 3) of Tb3+ can be observed. The concentration quenching effect of the system with high concentration doping of Tb3+ ions, can be significantly improved after the co-do-ping of Si or Al3+. The luminescence intensity of the sample doped by Si and Al3+ is twice as that of Al3+-doped sample. In addition, the oxygen vacancy defect introduced by annealing under Ar at-mosphere can make the system get significantly enhanced emissions, and the best annealing temper-ature is 1 200 ℃.关键词
Tb3+/硅基材料/荧光分析法/溶胶凝胶法Key words
Tb3+ ion/silicon-based material/fluorescence analysis/sol-gel method分类
数理科学引用本文复制引用
刘金金,徐明祥..氧化硅薄膜中掺杂Tb3＋离子的发光敏化[J].发光学报,2016,37(12):1464-1470,7.基金项目
江苏省自然科学基金(BK20141337)资助项目 （BK20141337）
