发光学报2016，Vol.37Issue(12)：1496-1501,6.DOI:10.3788/fgxb20163712.1496
氢退火对LPCVD生长的ZnO薄膜光学和电学性能的影响
Effect of Hydrogen Annealing on The Optical and Electrical Properties of ZnO Thin Films Grown by LPCVD
摘要
Abstract
B doped ZnO ( BZO) films were prepared on glass substrate by LPCVD method. The effect of hydrogen atmosphere annealing on the optical and electrical properties of BZO thin films was studied. The results show that the phase structure and the transmittance of the BZO films have no change after annealing in the hydrogen atmosphere, but the electrical conductivity of the BZO films is obviously improved. The Hall test results reveal that the carrier concentration is almost the same after hydrogen annealing, but the mobility is dramatically increased. The results in this paper should provide a reference for further improving the optical and electrical properties of BZO thin films.关键词
低压化学气相沉积/ZnO薄膜/光学性能/载流子浓度/霍尔迁移率Key words
low pressure chemical vapor deposition/ZnO thin film/optical properties/carrier concentration/Hall mobility分类
数理科学引用本文复制引用
李旺,唐鹿,杜江萍,薛飞,辛增念,罗哲,刘石勇..氢退火对LPCVD生长的ZnO薄膜光学和电学性能的影响[J].发光学报,2016,37(12):1496-1501,6.基金项目
江西科技学院博士科研启动基金；“863”国家高技术发展计划(2012AA052401)；国家自然科学基金(21571095)资助项目 （2012AA052401）
