发光学报2016，Vol.37Issue(12)：1502-1506,5.DOI:10.3788/fgxb20163712.1502
锥形半导体激光芯片的光刻工艺研究
Photoetching of Tapered Diode Laser Wafer
李景 1邱运涛 1曹银花 1王青 1尧舜 1许商瑞 1秦文斌 1刘友强 1王智勇1
作者信息
- 1. 北京工业大学 激光工程研究院，北京 100124
- 折叠
摘要
Abstract
For the very narrow ridge waveguide width, the etching marks and etching methods in the manufacturing of the semiconductor tapered laser chip were studied in this paper. The double photo-lithography alignment mark using two different precisions for the ridge area and the tapered area was proposed to refine the alignment in the etching of ridge waveguide and tapered waveguide. The pho-tolithography alignment marks were arranged in different place in different photolithography figure, and they interacted each other in order to keep the photolithography alignment marks clear and com-plete in repeated etching. By using this method, the etched chip delivers 4. 026 W CW output at 7 A current with the center wavelength of 963 nm, and the slow and fast direction beam quality is 1. 593 mm·mrad and 0. 668 mm·mrad, respectively.关键词
锥形半导体激光器/脊形波导/光刻标/芯片刻蚀Key words
tapered diode laser/ridge waveguide/photolithography alignment marks/wafer photoetching分类
信息技术与安全科学引用本文复制引用
李景,邱运涛,曹银花,王青,尧舜,许商瑞,秦文斌,刘友强,王智勇..锥形半导体激光芯片的光刻工艺研究[J].发光学报,2016,37(12):1502-1506,5.
