发光学报2016，Vol.37Issue(12)：1521-1531,11.DOI:10.3788/fgxb20163712.1521
射频磁控溅射法制备SnS2薄膜结构和光学特性的研究
Structural and Optical Properties of SnS2 Films Prepared by RF Magnetron Sputtering
摘要
Abstract
A series of SnS2 thin films were deposited on glass substrates by RF magnetron sputtering a SnS2 target. The effects of the preparation conditions on the properties of the films were studied. The crystal and phase structure of the thin films were investigated by X-ray diffraction and laser Ra-man spectroscopy. The chemical composition, optical properties of the SnS2 thin films were charac-terized by energy disperse X-ray spectroscopy, ultraviolet-visible-near infrared spectrophotometry ( UV-Vis-NIR) . The atomic ratio, optical constants and bandgap of SnS2 thin film were calculated and analyzed. The results show that the optimal condition for SnS2 thin films is the sputtering power of 60 W and argon pressure of 0. 5 Pa. The film is aligned along (001) preferred orientation, the transmittance and refractive index are high in the visible region, the extinction coefficient is small, and the direct bandgap is 2. 81 eV. The n-SnS2/p-Si heterojuction devices were fabricated. The de-vices exhibit good rectifying behaviors and weak photovoltaic properties. The photocurrent under the reverse bias voltage is increased with the increasing of illumination intensity. The photoconducting mechanism of the devices is controlled by the presence of exponential distribution of trap centers in the forbidden band of SnS2 .关键词
SnS2薄膜/射频磁控溅射/光学特性/异质结器件Key words
SnS2 thin films/RF magnetron sputtering/optical properties/heterojunction device分类
信息技术与安全科学引用本文复制引用
李学留,刘丹丹,梁齐,史成武,于永强..射频磁控溅射法制备SnS2薄膜结构和光学特性的研究[J].发光学报,2016,37(12):1521-1531,11.基金项目
国家自然科学基金(51272061)资助项目 （51272061）
