厦门大学学报（自然科学版）2016，Vol.55Issue(6)：810-814,5.DOI:10.6043/j.issn.0438-0479.201604011
Cu互连中V、V-N和V/V-N薄膜的扩散阻挡性能
Diffusion Barrier Performances of V,V-N and V/V-N Films in Cu Interconnection
摘要
Abstract
The V,V-N and V/V-N diffusion barrier layers with 50 nm thickness were deposited on Si(100)substrates by magnetron sputtering,and then the 300 nm thickness of the Cu films were prepared on diffusion barrier layers to obtain Cu/V/Si,Cu/V-N/Si and Cu/V/V-N/Si multilayer films.The multilayer film samples were subsequently annealed at 300-750 ℃ for 1 h in vacuum atmos-phere.The crystal structures,microstructure morphologies and square resistances were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM)and the four-point probe (FPP)methods to investigate the diffusion barrier performances of the V,V-N and V/V-N films.The results show as follows:diffusion barrier layers of V,V-N and V/V-N effectively blocked the dif-fusion of Cu into the Si substrate.The Cu/V/Si and Cu/V-N/Si multilayer films still kept good thermal stability at the annealing temperature of 600 ℃ and 650 ℃,respectively.However,for the Cu/V/V-N/Si multilayer film,due to the existence of stacking structure,the samples maintained favorable thermal stability when being annealed at 700 ℃.Therefore,the stacking structure of the V/V-N film was an ideal diffusion barrier layer.关键词
扩散阻挡层/阻挡性能/堆栈结构/磁控溅射Key words
diffusion barrier layer/barrier performance/stacking structure/magnetron sputtering分类
化学化工引用本文复制引用
王翠萍,戴拖,卢勇,施展,张锦彬,刘兴军..Cu互连中V、V-N和V/V-N薄膜的扩散阻挡性能[J].厦门大学学报（自然科学版）,2016,55(6):810-814,5.基金项目
国家自然科学基金(51571168) （51571168）
国家自然科学基金青年基金(51301146) （51301146）
科技部国际科技合作专项(2014DFA53040) （2014DFA53040）
