常州大学学报（自然科学版）2016，Vol.28Issue(6)：104-107,4.DOI:10.3969/j.issn.2095-0411.2016.06.019
忆阻电路的韦库模型及其建模分析
Flux-Charge Model of Memristive Circuit and Its Modeling Analysis
摘要
Abstract
In the electric circuits,current,voltage,charge and magnetic flux are four basic physical attrib-utes,from which four fundamental circuit elements including memristor are constituted.However,it is recently proposed that magnetic flux and charge are a pair of basic physical attributes and generate three basic element classes leaded by memristor,memcapacitor and meminductor,respectively.Taking resistor-memristor series circuit and memristive Chuas circuit as examples,the flux-charge models of memristive circuits are proposed using physical attributes of magnetic flux and charge, the corresponding mathematical models are established and the comparative analyses with the voltage-current models are per-formed.The results indicate that when the voltage-current model is used,memristor is a dynamic element, resulting in the circuit order to increase;while when the flux-charge model is utilized,memristor is a non-dynamic element,implying the circuit order to maintain,which facilitate the analysis of dynamical charac-teristics in complex memristive circuits.关键词
忆阻器/电路元件/韦库关系/忆阻电路Key words
memristor/circuit element/flux-charge relation/memristive circuit分类
信息技术与安全科学引用本文复制引用
陈墨,武花干,包伯成..忆阻电路的韦库模型及其建模分析[J].常州大学学报（自然科学版）,2016,28(6):104-107,4.基金项目
国家自然科学基金资助项目(51277017) （51277017）
江苏省高校自然科学研究面上项目(15KJB510001). （15KJB510001）
